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CMPD2003 CMPD2004 CMPD2004S HIGH VOLTAGE SWITCHING DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
SOT-23 CASE The following configurations are available: CMPD2003 CMPD2004 CMPD2004S SINGLE SINGLE DUAL, IN SERIES MARKING CODE: A82 MARKING CODE: D53 MARKING CODE: DB6
MAXIMUM RATINGS (TA=25oC) SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ,Tstg JA CMPD2004 CMPD2003 CMPD2004S 200 240 250 300 200 200 250 225 625 625 4000 4000 1000 1000 350 -65 to +150 357 UNITS V V mA mA mA mA mA mW oC oC/W
Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 s Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) CMPD2004 CMPD2003 CMPD2004S SYMBOL TEST CONDITIONS MIN MAX MIN MAX BVR IR=100 A 250 300 IR VR=200V 100 IR VR=200V, TA=150oC 100 IR VR=240V 100 oC IR VR=240V, TA=150 100 VF IF=100mA 1.0 1.0
UNIT V nA A nA A V
132
SYMBOL VF CT trr
CMPD2003 TEST CONDITIONS MIN MAX IF=200mA 1.25 VR=0, f=1 MHz 5.0 IF=IR=30mA, RECOV. TO 3.0mA, RL=100 50
CMPD2004 CMPD2004S MIN MAX 5.0 50
UNIT V pF ns
All dimensions in inches (mm).
NO CONNECTION
A
C1
A2
C
CMPD2003 CMPD2004
A1, C2
CMPD2004S
R2
133

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